Characterization of ZnSe/GaAs heterostructure using transverse acoustoelectric voltage spectroscopy

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Abstract
Transverse acoustoelectric voltage (TAV) spectroscopy has been employed to characterize the interface of high-resistivity ZnSe/GaAs heterostructure. Single- and double-beam TAV spectroscopy have been used to study the interface band and impurity transitions of the heterostructure at room temperature. From the TAV spectrum, a conduction band offset of 0.059 eV was found. The spectral behavior of the TAV waveform for single and double-beam cases was different due to the presence of a large number of surface states at the interface. Additional transitions in ZnSe film were also found in the double-beam case when a bias beam of 2.637 eV was used.