Determination of Effective Electron Mass in Lightly Doped Silicon from Microwave Reflectivity
- 1 May 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (6) , 2704-2705
- https://doi.org/10.1063/1.1709986
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Conductivity effective mass from far infrared reflection measurementsPhysica, 1965
- Charge carrier inertia in semiconductorsProceedings of the IEEE, 1964
- Determination of Free Electron Effective Mass of n-Type SiliconJournal of Applied Physics, 1963
- Dielectric constant of germanium and silicon as a function of volumeJournal of Physics and Chemistry of Solids, 1959
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956
- Microwave Determination of the Average Masses of Electrons and Holes in GermaniumPhysical Review B, 1955
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Microwave Observation of the Collision Frequency of Holes in GermaniumPhysical Review B, 1953
- Microwave Observation of the Collision Frequency of Electrons in GermaniumPhysical Review B, 1953