Quantisation of electron states in a two-dimensional GaAs impurity band at low carrier concentrations

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Abstract
A new effect has been observed by M. Pepper (1979) at low temperatures when the conduction is restricted to two dimensions in an n-type GaAs impurity band: at carrier concentrations less than about 1.5*1011 cm-2 the conductance is found to oscillate as a function of concentration. The sub-band structure of the Pepper device is studied here by means of a variational calculation. In particular the authors find that the oscillations in the conductance must be restricted to the lowest band since the concentration at which the Fermi level enters the second band closely agrees with Pepper's value above.