Chemical and physical processes during the formation of MoSi2 by ion-beam mixing
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 268-271
- https://doi.org/10.1016/0168-583x(89)90784-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A low-barrier Schottky process using MoSi2IEEE Transactions on Electron Devices, 1986
- Low-resistance MOS technology using self-aligned refractory silicidationIEEE Transactions on Electron Devices, 1984
- Formation Kinetics of Niobium and Molybdenum Silicides Induced by Ion BombardmentJapanese Journal of Applied Physics, 1984
- Refractory metal silicides: Thin-film properties and processing technologyIEEE Transactions on Electron Devices, 1983
- Growth ‘‘kinetics’’ and growth mechanisms for disilicide layers obtained through implantationJournal of Applied Physics, 1982
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Reaction of Mo Thin Films on Si (100) SurfacesJournal of the Electrochemical Society, 1980
- Reaction kinetics of molybdenum thin films on silicon (111) surfaceJournal of Applied Physics, 1978