Ion irradiation enhanced crystal nucleation in amorphous Si thin films
- 22 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (17) , 1766-1768
- https://doi.org/10.1063/1.104061
Abstract
The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500–580 °C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV.Keywords
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