High- f T n -MODFETs fabricatedon Si/SiGe heterostructuresgrown by UHV-CVD
- 7 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (1) , 86-87
- https://doi.org/10.1049/el:19990075
Abstract
The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2 µm and drain-source separation Lds = 0.9 µm displayed unity current gain cutoff frequencies as high as fT = 45 GHz (47 GHz) at Vds = +0.6 V (+1.5 V). Similar devices with Lg = 0.2 µm and Lds = 0.5 µm produced values of fT = 61 GHz (62 GHz) at Vds = +0.6 V (+1.0 V). The value fT = 62 GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.Keywords
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