Semi-Insulating Polysilicon (SIPOS) deposition in a low pressure CVD reactor: II. Oxygen content
- 31 December 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (3) , 501-509
- https://doi.org/10.1016/0022-0248(81)90107-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Semi-insulating polysilicon (SIPOS) deposition in a low pressure CVD reactor: I. Growth kineticsJournal of Crystal Growth, 1981
- Polysilicon growth kinetics in a low pressure chemical vapour deposition reactorThin Solid Films, 1979
- Oxygen Determination in SIPOS Using a Differential Thickness MeasurementJournal of the Electrochemical Society, 1978
- Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atomsJournal of Applied Physics, 1978
- The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and SteamJournal of the Electrochemical Society, 1963