A four-state EEPROM using floating-gate memory cells
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 22 (3) , 460-463
- https://doi.org/10.1109/jssc.1987.1052751
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Famos—A new semiconductor charge storage deviceSolid-State Electronics, 1974
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969