Electrical and structural properties of AlGaN: A comparison with CVD diamond
- 28 February 1998
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 7 (2-5) , 123-128
- https://doi.org/10.1016/s0925-9635(97)00204-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optical constants of epitaxial AlGaN films and their temperature dependenceJournal of Applied Physics, 1997
- Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin filmsApplied Physics Letters, 1997
- Microwave performance of AlGaN/GaN inverted MODFET'sIEEE Electron Device Letters, 1997
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- 75 Å GaN channel modulation doped field effect transistorsApplied Physics Letters, 1996
- AlGaN ultraviolet photoconductors grown on sapphireApplied Physics Letters, 1996
- Microstructure Evolution and Defect Incorporation in Highly Oriented and Textured CVD Diamond FilmsPhysica Status Solidi (a), 1996
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Oriented CVD diamond films: twin formation, structure and morphologyDiamond and Related Materials, 1994