Effect of argon ion implantation dose on silicon Schottky barrier characteristics
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 431-433
- https://doi.org/10.1063/1.95247
Abstract
The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low‐energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×1011 cm−2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion‐assisted dry etching processes on Si surface barriers.Keywords
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