Radiation defects in fast neutron-, electron-, and γ-irradiated silicon
- 16 March 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 100 (1) , K13-K16
- https://doi.org/10.1002/pssa.2211000148
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Room-temperature irradiation of p-type SiliconPhysica Status Solidi (a), 1985
- Deep-level transient spectroscopy studies of minority carrier traps in neutron-irradiated siliconJournal of Applied Physics, 1985
- The Effect of Dislocations on the Radiation Defect Annealing Processes in SiliconPhysica Status Solidi (a), 1982
- Defect production and lifetime control in electron and γ-irradiated siliconJournal of Applied Physics, 1982
- Deep levels in electron irradiated edge-defined film-fed growth ribbon siliconJournal of Applied Physics, 1981