Deep-level transient spectroscopy studies of minority carrier traps in neutron-irradiated silicon

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Abstract
Measurements of minority carrier traps produced in silicon by neutron irradiation at room temperature were performed using deep-level transient spectroscopy (DLTS), and these results were compared with those in 2-MeV electron-irradiated silicon. One electron trap (Ec−0.29 eV) and one hole trap (Ev+0.43 eV) were observed in neutron-irradiated p- and n-type silicon, respectively, which were also observed in the 2-MeV electron case. Furthermore, it was found that the isochronal annealing behavior of these minority carrier traps between the neutron and the 2-MeV electron case coincided with each other. The present results about minority carrier traps and previously reported ones about majority carrier traps indicated that the neutron damage was similar to the electron damage as far as the DLTS measurements are concerned.