Measurement of high-field electron transport in silicon carbide
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (2) , 269-273
- https://doi.org/10.1109/16.822266
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Measurement of high-field electron transport in silicon carbideIEEE Transactions on Electron Devices, 2000
- Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 TJournal of Applied Physics, 1998
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Saturated electron drift velocity in 6H silicon carbideJournal of Applied Physics, 1977