Monolithic GaAs p-i-n diode switch circuits for high-power millimeter-wave applications
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (12) , 2162-2165
- https://doi.org/10.1109/22.44137
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- A high performance V-band monolithic FET transmit-receive switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- X-band and Ka-band monolithic GaAs PIN diode variable attenuation limitersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultrafast GaAs microwave PIN diodeElectronics Letters, 1983
- Microwave Semiconductor EngineeringPublished by Springer Nature ,1982