High-efficiency GaAs lo-hi-lo IMPATT devices by liquid phase epitaxy for X band
- 1 July 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (1) , 92-94
- https://doi.org/10.1063/1.1655294
Abstract
n‐n+‐n epitaxial triple layers were grown by liquid phase epitaxy to fabricate lo‐hi‐lo GaAs IMPATT devices. The best diode gave 35.6% cw efficiency with 2.9‐W output power at 10.4 GHz. From a group of 151 devices, 51% had better than 22% efficiency with an average output power of 2.8 W at 10 GHz. Operating voltages varied between 40 and 55 V. A theoretical efficiency of 46% was calculated for narrow spike structures using a quasistatic computer simulation.Keywords
This publication has 2 references indexed in Scilit:
- Ge-doped p-type epitaxial GaAs for microwave device applicationApplied Physics Letters, 1973
- Theoretical and experimental study of GaAs IMPATT oscillator efficiencyJournal of Applied Physics, 1973