Early stages of growth of GaAs on Si observed by scanning tunneling microscopy
- 3 December 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (23) , 2419-2421
- https://doi.org/10.1063/1.103864
Abstract
Using a system coupling molecular beam deposition, scanning tunneling microscopy, and Auger spectroscopy in a connected ultrahigh-vacuum environment, we have observed the initial stages of GaAs growth on vicinal Si(100), including As termination, ordered Ga overlayers, and subsequent competition between two- and three-dimensional structures.Keywords
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