60 Ghz A l InAs/gainas/inp Dhbts Grown by Movpe+mbe
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. VIA_6-0_79
- https://doi.org/10.1109/drc.1991.664726
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A model-based comparison of AlInAs/GaInAs and InP/GaInAs HBT's: a Monte Carlo studyIEEE Transactions on Electron Devices, 1990
- High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capabilityElectronics Letters, 1988
- High-speed InGaAs(P)/InP double-heterostructure bipolar transistorsIEEE Electron Device Letters, 1987