Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
- 29 April 2010
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 645-648, 983-986
- https://doi.org/10.4028/www.scientific.net/msf.645-648.983
Abstract
We have observed a noticeable increase in the instability of the I-V characteristics following an ON-state current stress, especially in the subthreshold region. An increased stretch-out and negative shift can give rise to increased leakage current in the OFF-state if proper precautions are not met to provide a proper margin for the threshold voltage. State-of-the-art 50-A MOSFETs exhibit less instability than previous 20-A devices, and devices that run hotter show a larger degradation.Keywords
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