Implant damage and transient enhanced diffusion in Si
- 1 December 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 106 (1-4) , 191-197
- https://doi.org/10.1016/0168-583x(95)00703-2
Abstract
No abstract availableKeywords
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- Use of type II (end of range) damage as ‘‘detectors’’ for quantifying interstitial fluxes in ion-implanted siliconJournal of Applied Physics, 1993
- Pre-amorphization damage in ion-implanted siliconMaterials Science Reports, 1991
- An Atomic Model of Electron-Irradiation-Induced Defects on {113} in SiJapanese Journal of Applied Physics, 1991