GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm
- 30 March 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (13) , 1596-1598
- https://doi.org/10.1063/1.121126
Abstract
We demonstrate the longest =28.6 m) far-infrared quantum well photodetectors (QWIPs) based on a bound-to-bound intersubband transition in GaAs/AlGaAs. The responsivity is comparable with that of mid-infrared GaAs/AlGaAs and InGaAs/GaAs QWIPs. A peak responsivity of 0.265 A/W and detectivity of 2.5 10 cm /W at a wavelength of 26.9 m and 4.2 K have been achieved. Based on the temperature dependent dark current and responsivity results, it is expected that similar performance can be obtained at least up to 20 K.
Keywords
This publication has 7 references indexed in Scilit:
- GaAs multilayer p+-i homojunction far-infrared detectorsJournal of Applied Physics, 1997
- Very long wavelength InxGa1−xAs/GaAs quantum well infrared photodetectorsApplied Physics Letters, 1994
- Quantum-well infrared photodetectorsJournal of Applied Physics, 1993
- 19 μm cutoff long-wavelength GaAs/AlxGa1−xAs quantum-well infrared photodetectorsJournal of Applied Physics, 1992
- Photoconductive gain mechanism of quantum-well intersubband infrared detectorsApplied Physics Letters, 1992
- Si dopant migration and the AlGaAs/GaAs inverted interfaceApplied Physics Letters, 1991
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982