Very long wavelength InxGa1−xAs/GaAs quantum well infrared photodetectors
- 25 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (17) , 2288-2290
- https://doi.org/10.1063/1.111646
Abstract
We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa1−xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cm√Hz/W at T=10 K has been achieved.Keywords
This publication has 9 references indexed in Scilit:
- Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectorsApplied Physics Letters, 1993
- 19 μm cutoff long-wavelength GaAs/AlxGa1−xAs quantum-well infrared photodetectorsJournal of Applied Physics, 1992
- Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectorsApplied Physics Letters, 1992
- Si1−xGex/Si multiple quantum well infrared detectorApplied Physics Letters, 1991
- InGaAs/InP long wavelength quantum well infrared photodetectorsApplied Physics Letters, 1991
- The interfacial morphology of strained epitaxial InxGa1−xAs/GaAsJournal of Applied Physics, 1991
- I n s i t u measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substratesApplied Physics Letters, 1989
- Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wellsApplied Physics Letters, 1989
- Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown As/GaAs quantum wellsPhysical Review B, 1988