Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation-doped field-effect transistor monolithically integrated with In0.53Ga0.47As p-i-n photodiodes

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Abstract
Pseudomorphic In0.6Ga0.4As/In0.52Al0.48As 1 μm gate modulation‐doped field‐effect transistors have been monolithically integrated with In0.53Ga0.47As photodiodes for front‐end photoreceivers using one‐step molecular‐beam epitaxy and lithography techniques. A 1‐μm thick undoped In0.52Al0.48As layer is used to isolate the two devices. The transistors are characterized by gm(ext) =500 mS/mm and fT =9 GHz. The temporal response of the photodiodes is characterized by a linewidth of 60 ps. The eye pattern of the photoreceiver circuit for 1.7 Gbit/s pseudorandom optical signal is open and it is expected that the circuit can perform at bandwidths up to 2.5 GHz. Measured bandwidths of ∼6.5 GHz are obtained by using regrowth.