5.2-GHz bandwidth monolithic GaAs optoelectronic receiver
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (4) , 171-173
- https://doi.org/10.1109/55.679
Abstract
A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- Omega output buffer stage has been fabricated using an enhancement/depletion 0.35- mu m recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Omega into a 50- Omega load, which corresponds to a transimpedance bandwidth product of 1.5 THz- Omega .<>Keywords
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