Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semi-insulating GaAs
- 1 June 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 4 (6) , 574-582
- https://doi.org/10.1109/jlt.1986.1074779
Abstract
A monolithic optoelectronic-integrated circuit (OEIC) incorporating laser diodes, photomonitors, and laser driving and monitoring circuits has been fabricated on a semi-insulating GaAs substrate. The structure and circuit design considerations, the fabrication processes, and the static and dynamic characteristics of the device are described. The device has been successfully operated up to 2 Gbit/s.Keywords
This publication has 19 references indexed in Scilit:
- Monolithic Integration of a Laser and Driving Circuits in GaAs/GaAlAs System for High Speed Optical TransmissionPublished by Springer Nature ,1985
- Monolithic integration of optoelectronic devicesPublished by Optica Publishing Group ,1985
- Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistorsApplied Physics Letters, 1984
- An optoelectronic integrated device including a laser and its driving circuitIEE Proceedings H Microwaves, Optics and Antennas, 1984
- GaAs optoelectronic integrated light sourcesJournal of Lightwave Technology, 1983
- Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InPApplied Physics Letters, 1982
- Reactive ion beam etching of InP with Cl2Applied Physics Letters, 1981
- GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facetApplied Physics Letters, 1980
- GaInAsP/InP laser with monolithically integrated monitoring detectorElectronics Letters, 1980
- Monolithic integration of a GaAlAs injection laser with a Schottky-gate field effect transistorApplied Physics Letters, 1980