Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors
- 1 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3) , 191-193
- https://doi.org/10.1063/1.95205
Abstract
A monolithic integration of an InGaAsP laser diode together with current supplying circuit on a single InP substrate has been achieved. Heterojunction bipolar transistors (HBT’s) have been constructed utilizing the burying epitaxial layers of the buried heterostructure laser diode. The laser has been successfully modulated up to 1.6 GHz through the HBT’s driving circuit with sinusoidal electrical signal.Keywords
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