InP/GaAsSb type-II DHBTs with f _T >350 GHz

This publication has 5 references indexed in Scilit:

• InP/InGaAs SHBTs with 75 nm collector and f _T >500 GHz
  Electronics Letters, 2003
• Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
  IEEE Electron Device Letters, 2002
• 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
  IEEE Electron Device Letters, 2001
• Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
  Applied Physics Letters, 1996
• InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition
  Applied Physics Letters, 1996