In-Situ Monitoring of Electrical Parameters for Dry Etching
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Polysilicon Etching in SF 6 RF Discharges: Characteristics and Diagnostic MeasurementsJournal of the Electrochemical Society, 1986
- Plasma potentials of 13.56-MHz rf argon glow discharges in a planar systemJournal of Applied Physics, 1985
- Plasma parameter estimation from rf impedance measurements in a dry etching systemApplied Physics Letters, 1983
- Impedance measurement as a diagnostic for plasma reactorsReview of Scientific Instruments, 1981