Plasma parameter estimation from rf impedance measurements in a dry etching system
- 1 March 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (5) , 416-418
- https://doi.org/10.1063/1.93948
Abstract
The rf impedance of a dry etching system excited at 13.56 MHz is calculated from the settings of the matching network between the generator and the reactor. It is demonstrated that fundamental plasma parameters, which are useful in the evaluation of dry etching techniques, can be derived from these measurements. For an oxygen discharge at 27 Pa and 350 W m−2 the following parameter values are obtained: maximum ion bombardment energy 76 V, electron density in the glow 5×1014 m−3, ion flux density on the substrates 0.08 A m−2.Keywords
This publication has 9 references indexed in Scilit:
- Plasma beam studies of Si and Al etching mechanismsJournal of Vacuum Science and Technology, 1982
- Laser diagnostics of plasma etching: Measurement of Cl+2 in a chlorine dischargeJournal of Vacuum Science and Technology, 1982
- A kinetic study of the plasma-etching process. II. Probe measurements of electron properties in an rf plasma-etching reactorJournal of Applied Physics, 1982
- Experimental and design information for calculating impedance matching networks for use in rf sputtering and plasma chemistryVacuum, 1979
- Electrical Properties of RF Sputtering SystemsIBM Journal of Research and Development, 1979
- Measurement of plasma discharge characteristics for sputtering applicationsJournal of Vacuum Science and Technology, 1978
- Pressure dependence of electron temperature using rf-floated electrostatic probes in rf plasmasApplied Physics Letters, 1977
- rf discharge plasma conditions in a plasma processing apparatusVacuum, 1977
- Positive-ion bombardment of substrates in rf diode glow discharge sputteringJournal of Applied Physics, 1972