Electromigration Failure at Aluminum-Silicon Contacts
- 1 June 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (6) , 2595-2602
- https://doi.org/10.1063/1.1661564
Abstract
Previous experiments to measureelectromigrationproperties of Al–Si contacts were conducted at high current densities. Failures resulted from a combination of electromigration damage and diffusion of silicon into the aluminum lands. At low current densities, the silicondiffusion is significantly reduced and the median time to failure is inversely related to the current density. In addition, contacts ranging from 10×5 μ to 25×15 μ were tested to determine the dependence of median time to failure on contact size.This publication has 20 references indexed in Scilit:
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