Relaxation of the D center in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gap
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 327-330
- https://doi.org/10.1016/0022-3093(93)90556-d
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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