Defect chemical potential and the density of states in amorphous silicon
- 15 March 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 70 (11) , 1654-1657
- https://doi.org/10.1103/physrevlett.70.1654
Abstract
We derive a general expression for the defect chemical potential of amphoteric silicon dangling bond states in amorphous silicon. We show that a single expression is valid, irrespective of the charge state of the dangling bond. We apply this result in a defect pool model for the formation of dangling bonds by the breaking of weak silicon-silicon bonds, with and without hydrogen motion. We calculate the resulting energy dependent density of states.Keywords
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