Defect formation ina-Si:H
- 15 June 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (17) , 12150-12161
- https://doi.org/10.1103/physrevb.41.12150
Abstract
The bulk chemical processes responsible for defect equilibria in hydrogenated amorphous silicon (a-Si:H) are examined. Thermodynamic analyses of the corresponding chemical reactions are shown to account quantitatively for the observed defect-state-energy distribution and dependence of the defect concentration on temperature and Fermi energy. The dependence of a-Si:H defect properties on growth conditions is addressed.Keywords
This publication has 36 references indexed in Scilit:
- Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous siliconPhysical Review B, 1990
- Universal dopant and defect equilibration kinetics inn-typea-Si:HPhysical Review B, 1989
- Defect equilibria in undopeda-Si:HPhysical Review B, 1989
- Hydrogen-mediated model for defect metastability in hydrogenated amorphous siliconPhysical Review B, 1989
- Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy filmsPhysical Review B, 1988
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- Weak bond-dangling bond conversion in amorphous siliconPhilosophical Magazine Part B, 1987
- Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- Thermal equilibration in doped amorphous siliconPhysical Review B, 1986
- SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPYLe Journal de Physique Colloques, 1981