Fundamental lateral mode oscillation via gain tailoring in broad area semiconductor lasers
- 15 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 560-562
- https://doi.org/10.1063/1.96070
Abstract
We show that by employing gain tailoring in a broad area semiconductor laser we achieve fundamental lateral mode operation with a diffraction-limited single-lobed far-field pattern. We demonstrate a tailored gain broad area laser 60 μm wide which emits 450 mW per mirror into a stable, single-lobed far-field pattern 3 1/2° wide at 5.3 Ith.Keywords
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