A controllable nanomechanical memory element
- 18 October 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (16) , 3587-3589
- https://doi.org/10.1063/1.1808507
Abstract
We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly clamped suspended nanomechanical beam structure, which can be made to switch controllably between two stable and distinct states at a single frequency in the megahertz range. Because of their submicron size and high normal-mode frequencies, these nanomechanical memory elements offer the potential to rival the current state-of-the-art electronic data storage and processing.Keywords
All Related Versions
This publication has 14 references indexed in Scilit:
- Nanowire-based very-high-frequency electromechanical resonatorApplied Physics Letters, 2003
- Basic Research in the Information Technology IndustryPhysics Today, 2003
- Foundations of NanomechanicsPublished by Springer Nature ,2003
- Nanostructured silicon for studying fundamental aspects of nanomechanicsJournal of Physics: Condensed Matter, 2002
- Intrinsic dissipation in high-frequency micromechanical resonatorsPhysical Review B, 2002
- Elastic wave transmission at an abrupt junction in a thin plate with application to heat transport and vibrations in mesoscopic systemsPhysical Review B, 2001
- Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular ComputingScience, 2000
- External control of dissipation in a nanometer-scale radiofrequency mechanical resonatorSensors and Actuators A: Physical, 1999
- Evading amplifier noise in nonlinear oscillatorsPhysical Review Letters, 1994
- Redeeming Charles Babbage's Mechanical ComputerScientific American, 1993