Single-beam overwrite experiment using In-Se based phase-change optical media
- 16 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (11) , 667-669
- https://doi.org/10.1063/1.98060
Abstract
Single-beam overwrite in an optical disk is reported using In-Se-Tl amorphous-crystalline phase-change recording films having very short erasing (crystallization) time of 0.2 μs. The lifetime of the amorphous state in an In-Se-Tl film is estimated to be longer than 10 years at 60 °C. This is due to its high crystallization temperature (135 °C) and high activation energy (2.6 eV). The phase-change cycles can continue over 106 cycles in stationary state experiments using test samples. The possibility of single beam overwrite (rewriting without prior erasing as with a magnetic disk) is verified by using a 1.6-μm-diam round laser beam spot irradiated on a 5-in.-diam disk rotating at 2400 rpm.Keywords
This publication has 11 references indexed in Scilit:
- Output pulse termination of a self-sustained excimer laserApplied Physics Letters, 1986
- New phase change material for optical recording with short erase timeApplied Physics Letters, 1986
- Multi-quasiparticle induced prolate-oblate transitions in rapidly rotating N = 88,90 nucleiPhysics Letters B, 1986
- Phase-change optical recording in TeSeSb alloysJournal of Applied Physics, 1986
- Reversible Optical Recording Media with Ga-Se-Te SystemJapanese Journal of Applied Physics, 1985
- Reversibility and stability of tellurium alloys for optical data storage applicationsApplied Physics Letters, 1985
- Kinetic study of crystallization of glass by differential thermal analysis—criterion on application of Kissinger plotJournal of Non-Crystalline Solids, 1980
- RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORSApplied Physics Letters, 1971
- Vitreous Semiconductors (I)Physica Status Solidi (b), 1964
- Reaction Kinetics in Differential Thermal AnalysisAnalytical Chemistry, 1957