Adsorption of phosphorus on Si(111): Structure and chemical reactivity
- 15 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (2) , 1847-1850
- https://doi.org/10.1103/physrevb.43.1847
Abstract
We have investigated the adsorption and reaction of on Si(111)-(7×7) between 100 and 900 K. The topology, electronic structure, and chemical reactivity of the resulting P-doped surface was studied by ultraviolet photoemission spectroscopy, low-energy electron diffraction, and ion-scattering spectroscopy. The P-doped surface has a P:Si(111)-(1×1) structure where P substitutes for the first Si-layer atoms of the Si(111) surface. This surface has no dangling bonds and is chemically inert.
Keywords
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