Origins of stress on elemental and chemisorbed semiconductor surfaces
- 25 September 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (13) , 1404-1407
- https://doi.org/10.1103/physrevlett.63.1404
Abstract
First-principles calculations of stress and energy have been performed on 1×1 substitutional and √3 × √3 adatom-covered Si(111) and Ge(111) surfaces, using a variety of column-III, -IV, and -V adsorbates. Trends in surface stresses are understood in terms of three contributing factors: the relative atomic size of the adsorbate and substrate atoms, the chemical nature of the adsorbate species, and the bonding topology of the surface reconstruction.Keywords
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