On the insulating properties of the interfacial layer between ion bombarded-amorphous and crystalline silicon
- 1 July 1977
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 13 (3) , 255-259
- https://doi.org/10.1007/bf00882889
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electrical conduction in Si-implanted amorphous SiPhysical Review B, 1975
- Recovery of Silicon Layers Damaged by Low Energy Ion BombardmentPublished by Springer Nature ,1975
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968