Recovery of Silicon Layers Damaged by Low Energy Ion Bombardment
- 1 January 1975
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- On silicon amorphization during different mass ion implantationRadiation Effects, 1973
- Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and DoseJournal of Applied Physics, 1972
- Electrical and electron microscopy observations on defects in ion implanted siliconRadiation Effects, 1971
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968