Conduction-electron polarization and moment perturbations in diluteSi-based alloys
- 1 April 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (7) , 2809-2820
- https://doi.org/10.1103/physrevb.17.2809
Abstract
The spatial variation of the s-conduction-electron polarization in the Si system is determined from the measured hyperfine fields of the near-stoichiometric Si alloys. This polarization is then combined with the hyperfine-field data from Mn, V, Co, and Ni solutes and used to derive the solute moments and moment perturbations in Si to obtain the solute-moment and host-moment perturbations caused by these impurities. The behavior of these solute moments and moment perturbations is seen to be very similar to that of the same solutes in binary Fe alloys. Since Si is closely related to Heusler alloys, it is suggested that their magnetic behavior is also governed by the same mechanism that determines the magnetic behavior of binary Fe alloys; that is, the conduction -like electrons, not -like electrons, are responsible for the magnetic alignment.
Keywords
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