The stability of the self-consistently determined current of a double-barrier resonant-tunneling diode
- 15 September 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (6) , 3141-3147
- https://doi.org/10.1063/1.349294
Abstract
Double-barrier resonant-tunneling devices belong to a novel class of nanoelectronic devices with great potential applications. In these devices, the self-consistent buildup of charge due to resonant carriers in the well may lead to bistability and hysteresis. To investigate aspects of dynamical (in)stability, a simple set of equations is derived from an extension of the static theory. These dynamic equations adequately describe small and slow (<100 GHz) deviations from the stationary state. This approach is viewed more as being more satisfactory than an equivalent-circuit analysis, but its limitations are also discussed.This publication has 13 references indexed in Scilit:
- Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR regionElectronics Letters, 1990
- Numerical study of coherent tunneling in a double-barrier structureThin Solid Films, 1990
- Selfconsistent Study of Coherent Tunneling Through a Double Barrier StructurePhysica Scripta, 1990
- Is intrinsic bistability really intrinsic tristability?Applied Physics Letters, 1989
- Observation of intrinsic bistability in resonant tunnelling devicesElectronics Letters, 1988
- Small-signal impedance of GaAs-Al x Ga 1−x as resonant tunnelling heterostructures at microwave frequencyElectronics Letters, 1988
- Space-charge buildup and bistability in resonant-tunneling double-barrier structuresApplied Physics Letters, 1988
- Resonant tunneling in magnetic field: Evidence for space-charge buildupPhysical Review B, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985