Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism
- 1 June 1999
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 39 (6-7) , 803-807
- https://doi.org/10.1016/s0026-2714(99)00104-3
Abstract
No abstract availableKeywords
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