Modeling and simulation of stress-induced leakage current in ultrathin SiO/sub 2/ films

This publication has 10 references indexed in Scilit:

• Soft breakdown of ultra-thin gate oxide layers
  IEEE Transactions on Electron Devices, 1996
• Properties of high-voltage stress generated traps in thin silicon oxide
  IEEE Transactions on Electron Devices, 1996
• Stress-induced leakage current in ultrathin SiO2 films
  Applied Physics Letters, 1994
• Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides
  IEEE Transactions on Electron Devices, 1993
• Stress-induced current in thin silicon dioxide films
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1992
• Tunnel electron induced charge generation in very thin silicon oxide dielectrics
  Applied Physics Letters, 1991
• High-field-induced degradation in ultra-thin SiO/sub 2/ films
  IEEE Transactions on Electron Devices, 1988
• Oxide-thickness determination in thin-insulator MOS structures
  IEEE Transactions on Electron Devices, 1988
• Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime
  Journal of Applied Physics, 1983
• Tunneling of electrons from Si into thermally grown SiO2
  Solid-State Electronics, 1977