Tunnel electron induced charge generation in very thin silicon oxide dielectrics
- 10 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23) , 2666-2668
- https://doi.org/10.1063/1.104801
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Temperature dependence of trap creation in silicon dioxideJournal of Applied Physics, 1990
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- The relation between positive charge and breakdown in metal-oxide-silicon structuresJournal of Applied Physics, 1987
- Dynamic model of trapping-detrapping in SiO2Journal of Applied Physics, 1985
- High-field and current-induced positive charge in thermal SiO2 layersJournal of Applied Physics, 1985
- Model for the generation of positive charge at the Si-interface based on hot-hole injection from the anodePhysical Review B, 1985
- The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interfaceJournal of Applied Physics, 1985
- Field controlled charge trapping in tunnel oxidesApplied Physics Letters, 1984
- Impact ionization and positive charge in thin SiO2 filmsJournal of Applied Physics, 1976
- Impact ionization model for dielectric instability and breakdownApplied Physics Letters, 1974