Stress-induced current in thin silicon dioxide films
- 1 January 1992
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 139-142
- https://doi.org/10.1109/iedm.1992.307327
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Polarity dependence of thin oxide wearoutPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Stress induced leakage current limiting to scale down EEPROM tunnel oxide thicknessPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A high quality stacked thermal/LPCVD gate oxide for ULSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide filmsIEEE Electron Device Letters, 1991
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988
- A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin OxidesJournal of the Electrochemical Society, 1985
- Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunnelingJournal of Vacuum Science and Technology, 1982
- Carrier trapping hysteresis in MOS transistorsPhysica Status Solidi (a), 1970