Carrier trapping hysteresis in MOS transistors
- 16 March 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 1 (3) , 395-407
- https://doi.org/10.1002/pssa.19700010305
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Low frequency noise in MOS transistors—II ExperimentsSolid-State Electronics, 1968
- SURFACE-STATE RELATED l/f NOISE IN p-n JUNCTIONS AND MOS TRANSISTORSApplied Physics Letters, 1968
- A Quantitative Theory of 1/fType Noise Due to Interface States in Thermally Oxidized SiliconBell System Technical Journal, 1967
- Low frequency noise in MOS field effect transistorsSolid-State Electronics, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Evidence of the Surface Origin of theNoisePhysical Review Letters, 1966
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965
- Charge storage effects in silicon dioxide filmsIEEE Transactions on Electron Devices, 1965
- Stabilization of SiO2 Passivation Layers with P2O5IBM Journal of Research and Development, 1964