A Quantitative Theory of 1/fType Noise Due to Interface States in Thermally Oxidized Silicon

1 November 1967

journal article
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Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal

Vol. 46 (9) , 2019-2033
https://doi.org/10.1002/j.1538-7305.1967.tb04241.x

Abstract

A quantitative theory of 1/f type noise is derived from the distribution of trapping times for charges in interface states. The distribution of trapping times has been recently explained quantitatively by means of a random distribution of surface pot...

Keywords

This publication has 7 references indexed in Scilit:

MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION
Applied Physics Letters, 1967
Evidence of the Surface Origin of the $\frac{1}{f}$ Noise
Physical Review Letters, 1966
FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES
Applied Physics Letters, 1966
MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS
Applied Physics Letters, 1965
Low-frequency generation noise in junction field effect transistors
Solid-State Electronics, 1965
Theory of low-frequency generation noise in junction-gate field-effect transistors
Proceedings of the IEEE, 1964
A Possible Mechanism for $\frac{1}{f}$ Noise Generation in Semiconductor Filaments
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