Stress relaxation in laterally small strained semiconductor epilayers
- 1 January 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (1) , 666-668
- https://doi.org/10.1063/1.355813
Abstract
The stress field in laterally small strained semiconductor epilayers has been studied by the finite element method. The reaction of the epilayer on the substrate and the bulging-out effect caused by shear forces in the side wall boundaries play an important role. Analytical approximate methods are shown to be deficient. The normal stresses relax faster than a simple exponential with height z and virtually complete relaxation occurs at a height heff≊ √ab/2 (where a and b are the width and length, respectively, of the parallellopipidial epilayer) which is in good agreement with recent experiments. An equivalent lattice spacing fm as a function of z/√ab is defined and calculated.This publication has 9 references indexed in Scilit:
- Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxyApplied Physics Letters, 1992
- Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layersIEEE Electron Device Letters, 1992
- Structure, properties and applications of GexSi1-xstrained layers and superlatticesSemiconductor Science and Technology, 1991
- Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substratesApplied Physics Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliographyAdvances in Physics, 1990
- Island Formation in Ge on Si HeteroepitaxyMRS Proceedings, 1990
- Stresses in Bi-Metal ThermostatsJournal of Applied Mechanics, 1986
- New approach to the high quality epitaxial growth of lattice-mismatched materialsApplied Physics Letters, 1986