A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography
- 1 April 1990
- journal article
- review article
- Published by Taylor & Francis in Advances in Physics
- Vol. 39 (2) , 127-190
- https://doi.org/10.1080/00018739000101491
Abstract
No abstract availableThis publication has 63 references indexed in Scilit:
- Space groups and lattice dynamics of Ge/Si superlattices grown in the [001] directionSolid State Communications, 1989
- X-ray diffraction of strain relaxation in Si-Si1−xGex heterostructuresApplied Physics Letters, 1989
- High-temperature heat contents, thermal diffusivities, densities, and thermal conductivities of n-type SiGe(GaP), p-type SiGe(GaP), and p-type SiGe alloysJournal of Applied Physics, 1987
- Raman scattering from GexSi1−x/Si strained-layer superlatticesApplied Physics Letters, 1984
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- 13. Measurement of the lattice constant of SiGe heteroepitaxial layers grown on a silicon substrateVacuum, 1978
- Investigation of germanium films and GeSi interface structure by transmission electron microscopyThin Solid Films, 1975
- Heteroepitaxy of germanium thin films on silicon by ion sputteringJournal of Crystal Growth, 1974
- Raman scattering in GeSi alloysSolid State Communications, 1973
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958