Some second-phase structures in gallium arsenide annealed after implantation with zinc
- 15 July 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (2) , 69-71
- https://doi.org/10.1063/1.88369
Abstract
After GaAs was implanted with 1015/cm2 60‐keV Zn ions at ambient temperature, annealing with a rf‐sputtered SiO2 passivating layer resulted in the formation of the second‐phase structures ZnGa2O4 at 800 °C and primarily Zn3As2 at 600 °C. Possible relationships between the second‐phase structures and the electrical properties of the ion‐implanted annealed regions are discussed.Keywords
This publication has 9 references indexed in Scilit:
- Heat treatment of ion implanted GaAsRadiation Effects, 1974
- Anomalously high ``mobility'' in GaAsJournal of Applied Physics, 1973
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972
- High Apparent Mobility in Inhomogeneous SemiconductorsJournal of the Electrochemical Society, 1972
- High voltage electron microscopy of interfacial defects in GaAsMaterials Science and Engineering, 1972
- OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDEApplied Physics Letters, 1970
- Reinvestigation of Order‐Disorder in Gallate SpinelsJournal of the American Ceramic Society, 1968
- Anomalous Mobility Effects in Some Semiconductors and InsulatorsJournal of Applied Physics, 1962
- Lattice parameters of Zn3As2Acta Crystallographica, 1956